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Reflective Photosensors (Photo Reflectors)
CNB1001, CNB1002
Reflective Photosensors
Overview
CNB1001 and CNB1002 are a small, thin SMD-compatible reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.
1
4.30.3 2.7 0.35
3.4 1.8 3 C0.5 Chip center
Unit : mm
0.15 0.05+0.1 -0.05
Features
Reflow-compatible reflective photosensor Ultraminiature, thin type : 2.7 x 3.4 mm (height : 1.5 mm) Visible light cutoff resin is used
2 4-0.7
4 4-0.5
0.85 1.5
Absolute Maximum Ratings (Ta = 25C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Symbol Ratings VR IF PD*1 IC VCEO VECO PC
*2
Unit V mA mW mA V V mW C C
*1
6 50 75 20 35 6 75 -25 to +85
Topr
Tstg - 40 to +100
Electrical Characteristics (Ta = 25C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Symbol VF IR ICEO IC*1 IF = 20mA VR = 3V VCE = 20V VCC = 2V, IF = 4mA. RL = 100, d = 1mm VCC = 2V, IF = 4mA, RL = 100 IF = 20mA, IC = 0.1mA VCC = 5V, IC = 0.1mA, RL = 1000 30 40 23 Conditions min typ 1.2 max 1.4 10 100 160 100 0.4 Unit V A nA A nA V s
Leakage current ID Transfer Collector to emitter saturation voltage VCE(sat) characteristics tr*2 Response time tf*2
*1
Output Current (IC) measurement method (see figure below.)
Glass plate Evaporated Al d = 1mm
*2
Response time measurement circuit (see figure below.)
tr : Rise time Glass plate tf : Fall time Evaporated Al d = 1mm Sig.IN 90% 10%
,,,
IF
RL
Input and output are handled electrically. This product is not designed to withstand radiation.
,, ,,, ,
IC VCC
Sig.IN 50
RL
Sig. Sig.OUT OUT V CC
,, ,, ,,
23 4 Pin connection 1: Anode 3: Emitter 2: Cathode 4: Collector 1 41 2 Pin connection 1: Emitter 3: Anode 2: Collector 4: Cathode 3 (Note) Tolerance unless otherwise specified is 0.2
CNB1001
CNB1002
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C.
Color indication of classifications Class Q R S IC (A) 23 to 50 41 to 90 74 to 160 Color Orange White Light blue
, ,,, ,,, ,,,
, ,,, ,,, ,,
tr
tf
1
CNB1001,CNB1002
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
60 60
IF -- VF
800 Ta = 25C
IC -- IF
VCC = 5V Ta = 25C RL = 100 d = 1mm
IF , IC (mA)
50
IF
50
IF (mA)
IC (A) Collector current
600
Forward current, collector current
40
40
30 IC
Forward current
30
400
20
20
200
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
8
16
24
Ambient temperature Ta (C )
Forward voltage VF (V)
Forward current IF (mA)
VF -- Ta
1.6 600
IC -- VCE
160 d = 1mm Ta = 25C
IC -- Ta
VCC = 2V IF = 4mA RL = 100 120
VF (V)
1.2 10mA 1mA 0.8
IC (A)
IF = 20mA 400 15mA 300 10mA 8mA 100 6mA 4mA
Relative output current
Forward voltage
Collector current
IC (%)
IF = 50mA
500
80
200
0.4
40
0 - 40 - 20
0
20
40
60
80
100
0
2mA 0 1 2 3 4 5 6 7 8
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 VCE = 10V 10 3
tr , tf -- IC
100 VCC = 5V Ta = 25C : tr : tf 10 2 RL = 2k
IC -- d
VCE = 2V Ta = 25C IF = 4mA
IC (%)
tr , tf (s)
1
80
Rise time , fall time
10 -1
Relative output current
60
1k 10 100
Dark current
10 -2
40
1
10 -3
20
10 -4 - 40 - 20
0
20
40
60
80
100
10-1 10 -2
10 -1
1
10
0
0
2
Ambient temperature Ta (C )
Collector current IC (mA)
Distance d (mm)
2
, ,
d 4 6 8 10
ICEO (A)
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR

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